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基于双曲函数的双忆阻器混沌电路多稳态特性分析

闵富红 王珠林 曹弋 王恩荣

电子学报2018,Vol.46Issue(2):486-494,9.
电子学报2018,Vol.46Issue(2):486-494,9.DOI:10.3969/j.issn.0372-2112.2018.02.031

基于双曲函数的双忆阻器混沌电路多稳态特性分析

Multistability Analysis of a Dual-Memristor Circuit Based on Hyperbolic Function

闵富红 1王珠林 1曹弋 2王恩荣1

作者信息

  • 1. 南京师范大学电气与自动化工程学院,江苏南京210042
  • 2. 中核武汉核电运行技术股份有限公司 湖北武汉430223
  • 折叠

摘要

Abstract

A novel magnetron memristor model based on the hyperbolic sine function is proposed.And then,a new type of five-dimensional dual-memristor chaotic circuit is built by replacing the nonlinear resistance in the Chua's system with the magnetron memristor model.It is found that the dual-memristor system has the equilibrium point set.In addition,the numerical simulation of the memristive system is carried out by selecting the different initial values of the system and the multistribution characteristics of the fifth-order chaotic system are analyzed in detail by using the bifurcation diagram and Lyapunov exponent spectrum.The results show that the dual-memristive chaotic circuit is different from the dynamic behav-ior of the chaotic system.The motion trajectory of system depends not only on the circuit parameters but also on the initial state of the circuit,resulting in the coexistence of different periodic motions and different chaotic attractors with different to-pologies.

关键词

忆阻器/多稳态特性/动力学行为/混沌系统

Key words

memristor/multistable characteristic/dynamical behavior/chaotic system

分类

信息技术与安全科学

引用本文复制引用

闵富红,王珠林,曹弋,王恩荣..基于双曲函数的双忆阻器混沌电路多稳态特性分析[J].电子学报,2018,46(2):486-494,9.

基金项目

国家自然科学基金(No.51475246) (No.51475246)

江苏省自然科学基金(No.BK20131402) (No.BK20131402)

电子学报

OA北大核心CSCDCSTPCD

0372-2112

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