红外技术2018，Vol.40Issue(3)：201-208,8.
InGaAs/InP红外雪崩光电探测器的研究现状与进展
Recent Progress in InGaAs/InP Infrared Avalanche Photodetectors
摘要
Abstract
In recent years, quantum satellite communication and active imaging, where InGaAs/InP infrared avalanche photodetectors play a key role in single-photon detection, have progressed considerably. This review provides a detailed introduction to the basic principle of InGaAs/InP infrared avalanche photodetectors. The impact of the device structure characteristics on the dark current avalanche mechanism is summarized. Different circuits related to single-photon detection technology, running in Geiger mode, are presented. Several novel metal-insulator-metal structures are introduced for enhancing the quantum efficiency of InGaAs/InP infrared avalanche photodetectors, and their prospects are discussed.关键词
InGaAs/InP红外雪崩光电探测器/暗电流机制/单光子探测/表面等离共振效应Key words
InGaAs/InPinfrared avalanche photodetectors/dark current mechanism/single-photon detection/surface plasmon resonance effect分类
数理科学引用本文复制引用
胡伟达,李庆,温洁,王文娟,陈效双,陆卫..InGaAs/InP红外雪崩光电探测器的研究现状与进展[J].红外技术,2018,40(3):201-208,8.基金项目
国家杰出青年基金项目(61725505). （61725505）
