液晶与显示2018，Vol.33Issue(2)：138-143,6.DOI:10.3788/YJYXS20183302.0138
刻蚀液的调整对Array Mura影响的研究
Effects of array Mura by adj ustment of etchant
摘要
Abstract
Stainin room temperature (Array Mura)can be found in production.Aiming at the require-ments of high precise and low resistance circuit,a new type of wet etching etchant is necessary for the manufacturing in aluminum technology.By comparing three kinds of etchant,we made a conclusion that the shrinkage of Top Mo has played a significant role in the producing of Array Mura.The con-centration of nitric acid and other additive can control the process of electrochemical reaction which can drive an obvious improvement in Array Mura by controlling the shrinkage of Top Mo within 0.1 μm.The wet etching etchant C have already fitted all the etching parameters including CD bias and profile,and it also be imported into quantity production.关键词
常温污渍/钼缩进/刻蚀液Key words
room temperature stain/Mo shrink/etchant分类
信息技术与安全科学引用本文复制引用
冀新友,张家祥,王亮,张洁,卢凯,黄东升,陈思,王威..刻蚀液的调整对Array Mura影响的研究[J].液晶与显示,2018,33(2):138-143,6.基金项目
京东方TFT特性研发基金Supported by TFT Characteristic Research Fund of BOE （）
