真空电子技术Issue(1)：42-44,51,4.DOI:10.16540/j.cnki.cn11-2485/tn.2018.01.08
一种S波段基于注入锁定技术高效的MOSFET大功率微波源
An S-Band High Power Microwave Source Based on High Efficiency Injection-Locked MOSFET
杨梦琳 1刘臻龙 1刘长军1
作者信息
- 1. 四川大学电子信息学院,四川 成都 610064
- 折叠
摘要
Abstract
A high efficiency injection-locked MOSFET oscillator using imbalanced coupling resonator in feedback circuit is presented in this paper.An output power of 203 W and a drainefficiency of 54.18％ are obtained at 2.45 GHz,where the injection signal is 1/1000 of the output signal,and the locked bandwidth is 2.0 MHz.Compared with traditional high power microwave sources,the injection-locked MOSFET oscillator has advantages of low operating voltage,well phasecontrol and well frequency control,and is conducive to realize uniform heating and accurate temperature control in microwave chemical experiment.关键词
AB类放大器/注入锁定振荡器/反馈电路/相位控制Key words
Class-AB amplifier/Injection-lockedoscillator/Feedback circuit/Phase control分类
信息技术与安全科学引用本文复制引用
杨梦琳,刘臻龙,刘长军..一种S波段基于注入锁定技术高效的MOSFET大功率微波源[J].真空电子技术,2018,(1):42-44,51,4.
