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电致发光用于大功率半导体激光器失效模式分析

刘启坤 孔金霞 朱凌妮 熊聪 刘素平 马骁宇

发光学报2018,Vol.39Issue(2):180-187,8.
发光学报2018,Vol.39Issue(2):180-187,8.DOI:10.3788/fgxb20183902.0180

电致发光用于大功率半导体激光器失效模式分析

Failure Mode Analysis of High-power Laser Diodes by Electroluminescence

刘启坤 1孔金霞 2朱凌妮 1熊聪 1刘素平 1马骁宇1

作者信息

  • 1. 中国科学院半导体研究所光电子器件国家工程研究中心,北京100083
  • 2. 中国科学院大学材料科学与光电技术学院,北京 100049
  • 折叠

摘要

Abstract

We performed failure mode analysis (FMA) on the suddenly failed high-power 975 nm strained quantum well diode lasers.At first,we believed that the lasers suffered catastrophic optical damage (COD) at the mirror facets,which is called COMD.However,by electroluminescence (EL),we found that some lasers suffered COD only in the bulk without any damage at both facets,which is called COBD,thus guiding our further improvement.Among all the 90 lasers that suffered COD,the EL images demonstrate that the dark line defects (DLDs) can originate from the facets or the bulk.These DLDs are highly non-radiative region and usually confined in the active region with several branches,which leads to the dramatic decrease of the optical power.And to the different COD modes,the common features of DLDs were interpreted and compared in detail.Furthermore,the causes to the two typical COD modes were analyzed,and suggestions were made to suppress the COD process and further improve the high-power laser diodes.

关键词

大功率半导体激光器/失效模式分析/电致发光/突然光学灾变/暗线缺陷

Key words

high-power diode lasers/failure mode analysis/electroluminescence/catastrophic optical damage/dark line defect

分类

信息技术与安全科学

引用本文复制引用

刘启坤,孔金霞,朱凌妮,熊聪,刘素平,马骁宇..电致发光用于大功率半导体激光器失效模式分析[J].发光学报,2018,39(2):180-187,8.

发光学报

OA北大核心CSCDCSTPCD

1000-7032

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