垒层厚度对InGaN/GaN多量子阱电注入发光性能的影响及机理OA北大核心CSCDCSTPCD
Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence
研究了不同垒厚对InGaN/GaN多量子阱电注入发光性能的影响及机理.实验发现,当GaN垒层的厚度从6 nm增大到24 nm时,垒厚的样品发光强度更强,而且当注入电流增加时,适当增加垒厚,可以更显著增加发光强度.进一步结合发光峰位和光谱宽度的研究表明,由于应力和极化效应的存在,当垒层厚度在6～24 nm范围内时,适当增加垒层厚度不仅会使得能带的倾斜加剧,减少电子泄露,而且也会增加InGaN阱层的局域态深度,从而改善量子阱的发光性能.
The effects of barrier layer thickness on the electroluminescence performance of InGaN/GaN multiple quantum wells(MQWs) were investigated,and the relevant physical mechanisms were discussed.It is found that the electroluminescence (EL) intensity of the samples which have thicker barrier layers is stronger under the same injection current condition,and their increase with the increase of injection current is more rapid.According to the analysis,a proper incre…查看全部>>
黄佳琳;易淋凯;周梅;赵德刚
中国农业大学应用物理系,北京100083中国农业大学应用物理系,北京100083中国农业大学应用物理系,北京100083中国科学院半导体研究所集成光电子学国家重点实验室,北京100083
信息技术与安全科学
InGaN/GaN多量子阱垒层厚度电注入发光
InGaN/GaNmultiple quantum wellsbarrier thicknesselectroluminescence
《发光学报》 2018 (2)
InGaN量子阱材料的应力调控及背照射结构太阳电池研究
208-213,6
国家自然科学基金(61474142,21403297,11474355)资助项目Supported by National Natural Science Foundation of China (61474142,21403297,11474355)
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