光学精密工程2017，Vol.25Issue(12)：3128-3136,9.DOI:10.3788/OPE.20172512.3128
太赫兹CMOS场效应管模型及实验分析
Terahertz CMOS transistor model and experimental analysis
摘要
Abstract
As the commercial CMOS (Complementary Metal Oxide Semiconductor) transistor model will lose the accuracy in a high frequency range,a nonlinear RCL transmission line model based on classic kinetic theory was developed with ADS software.The accuracy of proposed model and the working principle of the CMOS in THz range were discussed based on measured data.A simulation system for the nonlinear RCL transmission line model was constructed,and simulation results were compared with that of commercial model and the difference between the proposed model and the commercial CMOS model in THz range was analyzed.Then,the frequency responses of current CMOS transistors were tested,tested data were compared with those of the simulation data from the two kinds of models.The results demonstrate that the proposed model has been improved the prediction accuracy.Finally,the effects of channel size of transistor on the scattering effect of carriers were analyzed and conditions of transistor to turn on ballistic mode were given with 3σ rules.The results show that the difference between the two models mainly focuses on the inductance part,which could represent the momentum conservation of carriers in transistor channel and if the scattering effect could be neglected or not.Compared with the commercial model,the prediction accuracy for the optimal resonant frequency of a detector has improved by 0.3％,and that for the optimal working bandwidth of the detector has increased about 10％.This study provides a good foundation for the accurate establishment and simulation analysis of CMOS transistor models.关键词
太赫兹CMOS场效应管/场效应管探测器/场效应管模型/散射效应Key words
Terahertz CMOS/transistor detector/transistor detector model/scattering effect分类
信息技术与安全科学引用本文复制引用
张镜水,孔令琴,董立泉,赵跃进..太赫兹CMOS场效应管模型及实验分析[J].光学精密工程,2017,25(12):3128-3136,9.基金项目
国家自然科学基金资助项目(No.61377109) （No.61377109）
