化工进展2018，Vol.37Issue(4)：1516-1521,6.DOI:10.16085/j.issn.1000-6613.2017-1247
纳米晶硅多层薄膜的低温调控及其发光特性
Low temperature preparation and luminescence properties of nanocrystalline silicon multilayer films
摘要
Abstract
The nanocrystalline silicon multilayers(nc-SiOx/a-SiOx)were deposited at low temperature by single-double target alternating sputtering technology. The thickness and the chemical composition of the a-SiOxbarrier layers were regulated to control the multilayers' microstructure. Transmission electron microscopy(TEM)analysis showed that the periodic structure was disrupted during the later deposition process because the a-SiOxlayer was too thin to effectively block the growth of nc-Si. The multilayer structure was successfully prepared by increasing the thickness of the a-SiOxlayer, however,there were still a part of nc-Si particles penetrating the barrier layer. Fourier transform infrared(FTIR)spectra showed that the oxidation reaction in the film and the active hydrogen atom effected on the growth of nc-Si. Therefore,the oxygen content of the a-SiOxlayer was increased which further blocked the growth of the nc-Si. Then,the film optical bandgap was adjusted and nc-Si particles size was controlled by regulating the thickness of nc-SiOxlayer. The absorption spectra showed that the optical bandgap of the film decreased with the increase of the nc-SiOxlayer thickness. The photoluminescence(PL)spectra showed that the multilayer structure was regulated by controlling nc-SiOxlayer thickness,and the resultant nc-Si with several nanometer produced a strong luminescence,which was attributed to a complex quantum confinement effect and the defect state luminescence mechanism.关键词
纳米晶硅/多层薄膜/显微结构/低温过程控制/纳米粒子/光致发光Key words
nanocrystalline silicon/multilayers/microstructure/low temperature process control/nanoparticles/photoluminescence分类
数理科学引用本文复制引用
李云,高东泽,焦玉骁,张博惠,许贺菊,赵蔚,于威,路万兵,李晓苇..纳米晶硅多层薄膜的低温调控及其发光特性[J].化工进展,2018,37(4):1516-1521,6.基金项目
国家自然科学基金青年基金(61504036),河北省自然科学基金青年基金(A2016201087),河北省科技计划(13214315),国家自然科学基金(11504078)及河北省高等学校科学技术研究项目(Z2015121). （61504036）
