太赫兹科学与电子信息学报2018，Vol.16Issue(1)：1-6,6.DOI:10.11805/TKYDA201801.0001
InP基RTD太赫兹振荡源及其应用研究进展
Research progress of InP-based resonant tunneling diode terahertz oscillator and its various applications
摘要
Abstract
Compact and coherent source is a key component for various applications of terahertz(THz) wave. Resonant Tunneling Diode(RTD) has been considered as candidates for THz oscillators under room temperature, because it is the electronic device with the highest oscillating frequency at present. RTD THz oscillation is of great advantages of compact structure, low power consumption, room temperature work, a certain output power, easy integration, wide coverage and so on. The output power of InP-based RTD THz oscillation could reach hundreds micro-watts at around 600 GHz. Up to now, the oscillation frequency is increased up to 1.92 THz with 0.4 μW output power. The output power of RTD oscillators can be directly modulated with bias voltage. Because of this property, the RTD oscillator can be adopted as a compact and simple source for high-capacity wireless communications which is an important application of THz waves. InP-based RTD THz oscillator is attracting more and more research interest currently.关键词
共振隧穿二极管/太赫兹源/振荡器/太赫兹通信Key words
Resonant Tunneling Diode/terahertz source/oscillator/terahertz communication分类
信息技术与安全科学引用本文复制引用
石向阳,苏娟,谭为,张健..InP基RTD太赫兹振荡源及其应用研究进展[J].太赫兹科学与电子信息学报,2018,16(1):1-6,6.基金项目
科学挑战专题资助 （）
