太赫兹科学与电子信息学报2018，Vol.16Issue(1)：17-20,37,5.DOI:10.11805/TKYDA201801.0017
电子束实现210nm栅长115GHz GaAs基mHEMT器件
210 nm T-gates of GaAs-based HEMT with fmax=115 GHz by one-step E-beam lithography approach
摘要
Abstract
A conventional tri-layer resist structure which consists of PMMA A4/PMMA-MMA/PMMA A2 is adopted to pattern the 210 nm T-gate resist profile in a single lithographic step and a single development step,in order to fabricate the T-shaped gate InAlAs/InGaAs metamorphic High Electron Mobility Transistors(mHEMTs) on a GaAs substrate. The DC and microwave performance of the device are characterized on wafer by an Agilent B1500 semiconductor parameter analyzer and an Agilent 360 B Vector Network Analyzer under room temperature,respectively. The mHEMT device shows the DC output characteristics having an extrinsic maximum transconductance gm:maxof 195 mS/mm and the full channel current of 160 mA/mm. The cut-off frequency fTand the maximum oscillation frequency fmaxfor the mHEMT device with gate width of 50 μm are 46 GHz and 115 GHz,respectively. Meanwhile,work has also been carried out to determine the quality of the Ti/Pt/Au Schottky contact to InAlAs with remarkably small gate leakage current in the order of 1×10-8A/μm,which is extremely useful for the reduction of shot noise and the LNA applications.关键词
T型栅/应变高电子迁移率晶体管/电流增益截至频率/最高振荡频率Key words
T-gate/mHEMT/current gain cut-off frequency/maximum oscillation frequency分类
信息技术与安全科学引用本文复制引用
曾建平,安宁,李志强,李倩,唐海林,刘海涛,梁毅..电子束实现210nm栅长115GHz GaAs基mHEMT器件[J].太赫兹科学与电子信息学报,2018,16(1):17-20,37,5.基金项目
国家自然科学基金-面上资助项目(61474102) （61474102）
