太赫兹科学与电子信息学报2018，Vol.16Issue(1)：135-138,4.DOI:10.11805/TKYDA201801.0135
高增益S波段小型化200W功率模块研制技术
High gain S-band miniaturized 200 W power amplifier module fabrication
李晶 1倪涛 1吴景峰 1赵夕彬 1王毅1
作者信息
- 1. 中国电子科技集团公司 第十三研究所,河北 石家庄 050051
- 折叠
摘要
Abstract
By using multistage RF amplifier circuit and the high voltage pulse modulation technology, the high gain S-band miniaturized 200 W GaN power amplifier module is successfully fabricated. The drive amplifier circuit adopts GaAs power chip for power combining. The last stage amplifier circuit is based on the gate-length(0.5 μm) GaN High Electron Mobility Transistor(HEMT) chip, and the heat distribution is improved by means of the multi-sub-cell structure. Through the internal matching, the matching network of two cells of 24 mm gate width GaN device is successfully designed, so is the high voltage pulse modulation circuit. The test results show that under the input power of 10 dBm, the gate voltage of -5 V, the drain voltage of 32 V, and TTL modulated signal, the output frequency is in the range of 3.1-3.5 GHz, the output power is above 200 W, and the Power Additional Efficiency (PAE) is more than 55%. The module size is 2.4 mm×38 mm×5.5 mm.关键词
GaN/功率放大模块/高压脉冲调制技术/小型化/阻抗匹配Key words
GaN/power amplifier module/high voltage pulse modulation technology/miniaturization/impedance matching分类
信息技术与安全科学引用本文复制引用
李晶,倪涛,吴景峰,赵夕彬,王毅..高增益S波段小型化200W功率模块研制技术[J].太赫兹科学与电子信息学报,2018,16(1):135-138,4.
