太赫兹科学与电子信息学报2018，Vol.16Issue(1)：158-163,6.DOI:10.11805/TKYDA201801.0158
硅在脉冲激光作用下温度积累效应的数值模拟
Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses
摘要
Abstract
The single-temperature model and Finite Element Method(FEM) are employed for the numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses. The time dependences of non-equilibrium carriers' density, free carrier absorption, and the lattice temperature under the interaction with one pulse, and multiple-pulse are studied, as well as the optical damage threshold. The results show that the accumulation of free carrier concentration is the main source of temperature accumulation. In the case of multiple-pulse, the shorter the pulse interval, and the narrower the pulse width, the more easily the material can be damaged.关键词
激光脉冲/温度积累效应/晶格温度/重复频率/损伤阈值/脉宽Key words
laser pulse/accumulative photo-thermal effect/lattice temperature/repetition rate/damage threshold/pulse width分类
信息技术与安全科学引用本文复制引用
孙鹏,李沫,杨庆鑫,汤戈,张健..硅在脉冲激光作用下温度积累效应的数值模拟[J].太赫兹科学与电子信息学报,2018,16(1):158-163,6.基金项目
中国工程物理研究院院长基金资助项目(2014-1-100) （2014-1-100）
