太赫兹科学与电子信息学报2018，Vol.16Issue(1)：181-185,5.DOI:10.11805/TKYDA201801.0181
不同偏置下铁电存储器总剂量辐射损伤效应
Ferroelectric memory ionizing radiation effects at different biases
摘要
Abstract
Two types of ferroelectric random memory are irradiated and annealed by 60Co γ-rays. Total Ionizing Dose(TID) failure mechanism of the device is analyzed at different biases. DC,AC and function parameters of the memory are tested through irradiating and annealing by Very Large Scale Integrated circuit(VLSI) test system. The radiation-sensitive parameters are obtained through analyzing the test data. The results show that the functional failure thresholds of ferroelectric memory are different at different biases, because different biases lead to different fragile circuit modules due to irradiation damage.关键词
铁电存储器/总剂量辐射/偏置Key words
ferroelectric random memory/ionizing radiation effects/bias分类
信息技术与安全科学引用本文复制引用
张兴尧,郭旗,李豫东,文林..不同偏置下铁电存储器总剂量辐射损伤效应[J].太赫兹科学与电子信息学报,2018,16(1):181-185,5.基金项目
国家自然科学基金青年科学基金资助项目(11705276) （11705276）
中科院西部之光资助项目(CAS-LWC-2017-2) （CAS-LWC-2017-2）
