电工技术学报2018，Vol.33Issue(7)：1472-1477,6.DOI:10.19595/j.cnki.1000-6753.tces.160678
具有高阈值电压和超低栅漏电的400 V常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管
400 V Normally-off Recessed MOS-Gate AlGaN/GaN HEMT with High Threshold Voltage and Ultra-Low Gate-Leakage Current
摘要
Abstract
We report normally-off operation of an AlGaN/GaN recessed MOS-gate high electron mobility transistor (MOS-gate HEMT) on Si (111) substrate fabricated with the inductively coupled plasma (ICP) recessed technique. By employing a 40nm thick Al2O3gate dielectric deposited by atomic layer deposition (ALD), the AlGaN/GaN HEMT with a gate length of 2 μm and a gate width of 10.35 mm exhibits a high threshold voltage of + 4.3 V, a specific on-resistance of 5.73 m?·cm2and a saturation drain current of 0.71 A. When the gate bias (Vgs) is 0V, the breakdown voltage (BV) of the AlGaN/GaN HEMT is 400 V and the drain to source leakage current is below 320 μA with a gate-drain distance of 10μm. The on/off drain current ratio (ION/IOFF) is over 109. Under a negative gate bias (Vgs) of - 20V, the gate to source leakage current is as low as 1.8 nA. Under a positive gate bias (Vgs) of +12 V, the gate to source leakage current is only 1.6 μA. The high ION/IOFFratio and low gate to source leakage both indicate high quality of the Al2O3/GaN interface.关键词
AlGaN/GaN/高阈值电压/大栅压摆幅/常关型Key words
AlGaN/GaN/high threshold voltage/large gate swing/normally-off分类
信息技术与安全科学引用本文复制引用
赵勇兵,程哲,张韵,伊晓燕,王国宏..具有高阈值电压和超低栅漏电的400 V常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J].电工技术学报,2018,33(7):1472-1477,6.基金项目
This work is supported by the National High Technology Research and Development Program of China (No.2014 AA 032606) and the National Natural Sciences Foundation of China (No.61376090, 61306008). （No.2014 AA 032606）
