首页|期刊导航|半导体学报（英文版）|Investigation on the InAS1-xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

Investigation on the InAS1-xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

D.Benyahia L.Kubiszyn K.Michalczewski A.K(e)b(l)owski P.Martyniuk J.Piotrowski A.Rogalski

半导体学报（英文版）2018，Vol.39Issue(3)：14-18,5.

半导体学报（英文版）2018，Vol.39Issue(3)：14-18,5.DOI:10.1088/1674-4926/39/3/033003

Investigation on the InAS1-xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

D.Benyahia ¹L.Kubiszyn ²K.Michalczewski ¹A.K(e)b(l)owski ²P.Martyniuk ¹J.Piotrowski ²A.Rogalski¹

作者信息

1. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
2. Vigo System S.A., 129/133 Pozna(n)ska Str., 05-850 O(z)arów Mazowiecki, Poland
折叠

摘要

关键词

MBE/InAsSb/Hall effect/GaAs/X-ray diffraction

Key words

MBE/InAsSb/Hall effect/GaAs/X-ray diffraction

引用本文复制引用

D.Benyahia,L.Kubiszyn,K.Michalczewski,A.K(e)b(l)owski,P.Martyniuk,J.Piotrowski,A.Rogalski..Investigation on the InAS1-xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy[J].半导体学报（英文版）,2018,39(3):14-18,5.

基金项目

Project supported by the Polish National Science Centre (No.UMO-2015/17/B/ST5/01753). （No.UMO-2015/17/B/ST5/01753）

半导体学报（英文版）

OACSCDCSTPCD

ISSN：1674-4926

访问量0

下载量0

段落导航