半导体学报（英文版）2018，Vol.39Issue(4)：34-38,5.DOI:10.1088/1674-4926/39/4/044001
Design and simulation of nanoscale double-gate TFET/tunnel CNTFET
Design and simulation of nanoscale double-gate TFET/tunnel CNTFET
Shashi Bala 1Mamta Khosla1
作者信息
- 1. Department of Electronic and Communication Engineering, Dr B R Ambedkar Natrional Institute of Technology, Jalandhar 144011, India
- 折叠
摘要
关键词
band-to-band tunneling (BTBT)/double gate (DG)/silicon (Si)/gallium arsenide (GaAs)/aluminum gallium arsenide (AlxGa1-xAs)/tunnel field effect transistor (FET)/carbon nanotube (CNT)Key words
band-to-band tunneling (BTBT)/double gate (DG)/silicon (Si)/gallium arsenide (GaAs)/aluminum gallium arsenide (AlxGa1-xAs)/tunnel field effect transistor (FET)/carbon nanotube (CNT)引用本文复制引用
Shashi Bala,Mamta Khosla..Design and simulation of nanoscale double-gate TFET/tunnel CNTFET[J].半导体学报（英文版）,2018,39(4):34-38,5.
