Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure
Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure
摘要
关键词
via thin film LED structure/GaN-on-Si/light-emitting diode/light extractionKey words
via thin film LED structure/GaN-on-Si/light-emitting diode/light extraction引用本文复制引用
Zengcheng Li,Huaibing Wang,Xiaoli Yang,Hui Yang,Bo Feng,Biao Deng,Legong Liu,Yingnan Huang,Meixin Feng,Yu Zhou,Hanmin Zhao,Qian Sun..Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure[J].半导体学报（英文版）,2018,39(4):39-43,5.基金项目
Project supported by the National Key R&D Program (Nos.2016YFB0400100,2016YFB0400104),the National Natural Science Foundation of China (Nos.61534007,61404156,61522407,61604168,61775230),the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No.QYZDB-SSW-JSC014),the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Key R&D Program of Jiangsu Province (No.BE2017079),the Natural Science Foundation of Jiangsu Province (No.BK20160401),and the China Postdoctoral Science Foundation (No.2016M591944).This work was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No.SKLA-2016-01),the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos.IOSKL2016KF04,IOSKL2016KF07),and the Seed Fund from SINANO,CAS (No.Y5AAQ51001). （Nos.2016YFB0400100,2016YFB0400104）
