红外与毫米波学报2018，Vol.37Issue(1)：15-19,5.DOI:10.11972/j.issn.1001-9014.2018.01.004
fT为350GHz的InAlN/GaN HFET高频器件研究
High-frequency InAlN/GaN HFET with an fT of 350 GHz
摘要
Abstract
Scaled InA1N/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) were realized by employing nonalloyed regrown n +-GaN Ohmic contacts,in which the source-to-drain distance (Lsd) was scaled to 600 nm.By processing optimization of dry etching and n +-GaN regrowth,a low total Ohmic resistance of 0.16 Ω· mm is obtained,which is a recorded value regrown by metal organic chemi-cal vapor deposition (MOCVD).A 34 nm rectangular gate was fabricated by self-aligned-gate technology.The electrical characteristics of the devices,especially for the RF characteristics,were improved greatly after the reduction of ohmic resistance and gate length.The fabricated InAIN/GaN HFETs show a low on resistance (Ron) of 0.41 Ω· mm and a high drain saturation current density of 2.14 A/mm at Vgs =1 V.Most of all,the device shows a high fT of 350 GHz,which is a recorded result reported for GaN-based HFETs in domestic.关键词
铟铝氮氮化镓异质结/异质结场效应晶体管/电流增益截止频率/非合金欧姆接触工艺/纳米栅Key words
InAlN/GaN/HFET/current gain cut-off frequency/nonalloyed Ohmic contacts/nano-gate分类
信息技术与安全科学引用本文复制引用
付兴昌,吕元杰,张力江,张彤,李献杰,宋旭波,张志荣,房玉龙,冯志红..fT为350GHz的InAlN/GaN HFET高频器件研究[J].红外与毫米波学报,2018,37(1):15-19,5.基金项目
Supported by MOST (2017YFA0205800),National Natural Science Foundation of China (11734005,61674130 and 61604137) （2017YFA0205800）
