红外与毫米波学报2018，Vol.37Issue(1)：30-34,128,6.DOI:10.11972/j.issn.1001-9014.2018.01.007
高性能单光子雪崩二极管在180nm CMOS工艺中的设计与实现
Design and implementation of high performance single-photon avalanche diode in 180 nm CMOS technology
摘要
Abstract
A wide spectral range and fast Single-photon avalanche diode (SPAD) chip which can be integrated with actively quenching circuit for large array realization is designed and implemented.The precise circuit model of SPAD for simulating the static and dynamic behaviors in Geiger-mode is used.The device with an 8 μm diameter active area is fabricated in GSMC 180 nm CMOS image sensor (CIS) technology.With the efficient device' s structure,the low breakdown voltage is 15.2 V and quenching time is 7.9 ns.Additionally,the device achieves wide spectral sensitivity and enables maximum photon detection probability (PDP) of 15.7％ from 470 to 680 nm of wavelength at low excess voltage.Moreover,it exhibits a relatively low dark count rate (DCR) at room temperature.关键词
单光子雪崩二极管/光子探测概率/模型/盖革模式/CMOS图像传感器技术Key words
single-photon avalance diode (SPAD)/photon detection probability (PDP)/model/Geiger mode/CMOS CIS technology分类
信息技术与安全科学引用本文复制引用
金湘亮,曹灿,杨红姣..高性能单光子雪崩二极管在180nm CMOS工艺中的设计与实现[J].红外与毫米波学报,2018,37(1):30-34,128,6.基金项目
Supported by the Key Program of National Natural Science of China (61233010),by the National Natural Science Foundation of China (61774129,61704145) and by Hunan Provincial Natural Science Fund for Distinguished Young Scholars (2015JJ1014) （61233010）
