红外与毫米波学报2018，Vol.37Issue(2)：135-139,5.DOI:10.11972/j.issn.1001-9014.2018.02.002
太赫兹InP基InAlAs/InGaAs PHEMTs的研制
Design and realization of THz InAlAs/InGaAs InP-based PHEMTs
摘要
Abstract
In this paper,90-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors(PHEMTs)with well-balanced cut-off frequency ftand maximum oscillation frequency fmaxare reported.This device with a gate-width of 2×25 μm shows excellent DC characteristics, including a maximum saturation current density Idssof 894 mA/mm,and a maximum extrinsic transconductance gm,maxof 1 640 mS/mm. The off-state breakdown voltage(BVoff-state)defined at a gate current of 1mA/mm is 3.3 V.The RF measurement is carried out covering the full frequency range from 1 to 110 GHz,an extrapolated ftof 252 GHz and fmaxof 394 GHz are obtained,respectively.These results are obtained by the combination of gate size scaling, parasitics re-duction and the on-wafer measurement in the full frequency band from 1 to 110 GHz.关键词
磷化铟/赝配高电子迁移率晶体管/InAlAs/InGaAs/在片测试/单片集成电路Key words
InP/PHEMTs/InAlAs/InGaAs/on-wafer measurement/monolithic microwave integrated circuits(MMICs)分类
信息技术与安全科学引用本文复制引用
王志明,黄辉,胡志富,赵卓彬,崔玉兴,孙希国,李亮,付兴昌,吕昕..太赫兹InP基InAlAs/InGaAs PHEMTs的研制[J].红外与毫米波学报,2018,37(2):135-139,5.基金项目
Supported by National Natural Science Foundation of China(61275107) （61275107）
