红外与毫米波学报2018，Vol.37Issue(2)：163-167,5.DOI:10.11972/j.issn.1001-9014.2018.02.006
InP基HEMTs器件16参数小信号模型
An improved 16-element small-signal model for InP-based HEMTs
摘要
Abstract
In this paper,an improved 16-element small-signal topology for InAlAs/InGaAs InP-based HEMTs has been proposed.The gate-source resistance(Rgs)is introduced into the topological structure to characterize the gate leakage current caused by the short gate channel spacing.The output conductance(gds)and drain delay factor (τds)are proposed to characterize the impact of drain voltage on channel current and also the phase change by drain-source capacitor(Cds),which can improve the fitting accuracy of S22.The parasitic elements are calculated through open and short dummy structures,and the intrinsic parameters are extracted by Y-parameters after de-em-bedding the external parasitic parameters.The ultimate values of parameters are determined by optimization proce-dure to gain the best fitting precision.The results show that the simulation values of S-parameters and frequency characteristics fit well with the measured values,and the introduction of Rgsand τdsreduces the model error.The accurate and appropriate small signal model for InP-based HEMTs would be of great importance in the design of high-frequency circuits.关键词
InP基高电子迁移率晶体管/小信号模型/栅泄漏电流/漏端延时Key words
InP-based HEMTs/small-signal model/gate-leakage current/drain delay分类
信息技术与安全科学引用本文复制引用
钟英辉,李凯凯,李梦珂,王文斌,孙树祥,李慧龙,丁鹏,金智..InP基HEMTs器件16参数小信号模型[J].红外与毫米波学报,2018,37(2):163-167,5.基金项目
Supported by National Natural Science Foundation of China(11775191,61404115,61434006),and Development Fund for Outstanding Young Teachers in Zhengzhou University China(1521317004) （11775191,61404115,61434006）
