红外与毫米波学报2018，Vol.37Issue(2)：184-191,199,9.DOI:10.11972/j.issn.1001-9014.2018.02.010
基于标准CMOS工艺线性APD倍增区的优化仿真
Simulation of the multiplication zone for linear APD based on standard CMOS process
摘要
Abstract
The doping distribution in the multiplication zone of n+-p-π-p+structured linear avalanche photodiode(APD)based on standard CMOS process greatly determines the device performance.The influences of implanting dose and the depth of its peak concentration of the p-layer on device character-istics are simulated using Silvaco.The simulation results show that, at a given gain of 50, the opti-mized doping dose of P layer is 1.82×1012/cm2with depth of peak concentration 2.1 μm.Under opti-mized conditions, the reverse bias voltage is 73.1 V,the excess noise factor is 4.59,and the excess noise index is 0.34~0.45(λ=800 nm),which are better than those reported.The performance of the APD may be further improved through process optimization.关键词
标准CMOS工艺/线性APD/掺杂分布/峰值浓度深度/仿真Key words
standard CMOS process/linear APD/doping distribution/depth of peak concentration/sim-ulation分类
信息技术与安全科学引用本文复制引用
鞠国豪,程正喜,陈永平,钟燕平..基于标准CMOS工艺线性APD倍增区的优化仿真[J].红外与毫米波学报,2018,37(2):184-191,199,9.基金项目
中国科学院上海技术物理研究所重点培育方向性项目Supported by Shanghai Institute of Technical Physics,Chinese Academy of Sciences Focus on Cultivating Directional Project （）
