电源技术2018，Vol.42Issue(4)：525-526,2.
ICP-OES快速测定CIGS薄膜中主体及掺杂元素
Determination of copper, indium, gallium, selenium and doped elements (Na) in CIGS thin films by ICP-OES
谭立志 1陈欣蕊 1王星1
作者信息
- 1. 中国电子科技集团公司第十八研究所,天津300384
- 折叠
摘要
Abstract
A determination method of copper,indium,gallium,selenium and doped elements (Na) was introduced.The suitable area of CIGS samples was dissolved by aqua fortis.After filtrating,the solution was used to determine copper,indium,gallium,selenium and doped elements (Na) by ICP-OES method.The atomic ratio of each element was calculated by normalization method.关键词
CIGS/掺杂/ICP/归一化法Key words
CIGS/doping/ICP/normalization method分类
信息技术与安全科学引用本文复制引用
谭立志,陈欣蕊,王星..ICP-OES快速测定CIGS薄膜中主体及掺杂元素[J].电源技术,2018,42(4):525-526,2.
