南京理工大学学报（自然科学版）2018，Vol.42Issue(2)：148-154,7.DOI:10.14177/j.cnki.32-1397n.2018.42.02.003
毫秒激光与硅靶相互作用靶材后表面温度的干涉法测量
Interferometry measurement of back surface temperature of silicon plate after interaction with millisecond laser
摘要
Abstract
The steam velocity and temperature variations of the silicon plate after its interaction with the millisecond laser are studied. Sequence interference pictures of interaction between the 1 ms pulse width and 5.82×103J/cm2energy density laser and the 0.3 mm thickness silicon plate are obtained by experiments. These sequence interference pictures show that,after the silicon plate being irradiated by 466 μs,the gasification phenomenon is produced on the front and the back surfaces of the silicon plate;and after the silicon plate being irradiated 699 μs,there are melt splashes producing on the front and back surfaces of the silicon plate. According to the position change and the time interval of the interference fringes of two adjacent interference pictures,the gasification rate of the steam on the back surface after 466~699 μs laser irradiation is calculated(20.47±0.08 m/s). By using Rankine-Hugoniot relations,the kinetic theory of gases and the mass,momentum,energy conservation equation of the Knudsen layer,the vapor pressure of the back surface is obtained;And by the Clapeyron-Clausius equation,the temperature of the back surface of the silicon plate after 466~699 μs laser irradiation is calculated(3551.2±2 K),and the result is consistent with that of the literature. Finally,the mechanism of molten splash is analyzed through the calculated temperature.关键词
干涉法测量/表面温度/气化速度/熔融喷溅Key words
interferometry measurement/surface temperature/gasification rate/melt splash分类
信息技术与安全科学引用本文复制引用
张梁,倪晓武,陆建..毫秒激光与硅靶相互作用靶材后表面温度的干涉法测量[J].南京理工大学学报（自然科学版）,2018,42(2):148-154,7.基金项目
中央高校基本科研业务费专项资金资助项目(30920130123001) （30920130123001）
