现代电子技术2018，Vol.41Issue(10)：70-73,4.DOI:10.16652/j.issn.1004⁃373x.2018.10.018
SiC SBD基温度传感器灵敏度影响因素的研究
Research on sensitivity influencing factors of SiC SBD based temperature sensor
摘要
Abstract
The SiC-based temperature sensor receives great attention as it can realize much higher work temperature than the Si-based temperature sensor. The sensitivity influencing factors of the SiC SBD based temperature sensor are studied theoreti-cally and experimentally. The analytical model based on the thermionic emission theory shows that the sensitivity influencing fac-tors of the temperature sensor are mainly ideal factors. The Spice is adopted to simulate the V-T relationship of SiC SBD at differ-ent bias currents. The results show that the sensitivity increases as the forward current decreases,and the linearity is good. The bias circuit with 10 mA constant current source is adopted to test the V-T feature of three manufactures′ SiC SBDs. The results show that the upper temperature limits measured by the three SiC SBDs are all higher than 400 ℃,the linearity is good,and the sensitivity is close to 1.5 mV/°C. At last,an optimization design scheme for improving the sensitivity of SiC SBD based tem-perature sensor is proposed.关键词
SiC基温度传感器/肖特基势垒二极管/V-T特性/偏置电路/线性度/灵敏度Key words
SiC-based temperature sensor/SBD/V-T feature/bias circuit/linearity/sensitivity分类
信息技术与安全科学引用本文复制引用
高攀,杨小艳,张林..SiC SBD基温度传感器灵敏度影响因素的研究[J].现代电子技术,2018,41(10):70-73,4.基金项目
陕西省自然科学基础研究计划项目(2015JM63570) （2015JM63570）
西安市科技局项目(CXY1441(9)) （CXY1441(9）
国家级大学生创新创业训练项目(201510710126)Project Supported by Natural Science Basic Research Plan of Shaanxi Province(2015JM6357),Project of Xi'an Science and Technology Bureau(CXY1441(9)),National Project of University Students Innovation and Entrepreneurship Training(201510710126) （201510710126）
