郑州大学学报（工学版）2018，Vol.39Issue(2)：86-91,6.DOI:10.13705/j.issn.1671-6833.2018.02.011
退火温度对Nb掺杂TiO2薄膜结构与性能的影响
Influence of Annealing Temperature on Structure and Properties of Nb-doped TiO2 Thin Films
摘要
Abstract
Nb-doped TiO2transparent conductive thin films were prepared on Glass substrates by magnetron sputtering method.The structure and the properties of the films were characterized by using X-ray diffraction (XRD),atomic force microscope (AFM),UV-Vis spectroscopy and four probe resistance tester.The results showed that the anatase phase Nb-doped TiO2 thin films were obtained when the annealing temperature above 250℃,also the structure and the photoelectricl properties were improved with the temperature increased.The best visible light transmissivity reached to 80％ and resistivity droped to 2.5 × 10-3Ω·cm when temperature at 300℃.As the annealing temperature were risen to 350℃,the films began to appear rutile phase,then the photoelectric properties were decreased.Moreover Nb doping was beneficial to reduce the crystal phase transformation temperature of the TiO2 thin film.The Nb-doped TiO2thin film absorption edge also produced blue shift,and the blue shift degree of the thin films absorption edge was different with the change of annealing temperatures.关键词
温度/Nb掺杂/TiO2薄膜/结构/光电性能Key words
temperature/Nb-doped/TiO2 thin film/structure/photoelectric property分类
信息技术与安全科学引用本文复制引用
苏雷生,林钰,董林,辛荣生..退火温度对Nb掺杂TiO2薄膜结构与性能的影响[J].郑州大学学报（工学版）,2018,39(2):86-91,6.基金项目
国家自然科学基金资助项目(11674290) （11674290）
河南省科技厅科技攻关资助项目(142102210068) （142102210068）
