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Growth and characteristics of p-type doped GaAs nanowire

Bang Li Xin Yan Xia Zhang Xiaomin Ren

半导体学报（英文版）2018，Vol.39Issue(5)：26-29,4.

半导体学报（英文版）2018，Vol.39Issue(5)：26-29,4.DOI:10.1088/1674-4926/39/5/053004

Growth and characteristics of p-type doped GaAs nanowire

Bang Li ¹Xin Yan ¹Xia Zhang ¹Xiaomin Ren¹

作者信息

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
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摘要

关键词

nanowire/GaAs/p-doped/VLS

Key words

nanowire/GaAs/p-doped/VLS

引用本文复制引用

Bang Li,Xin Yan,Xia Zhang,Xiaomin Ren..Growth and characteristics of p-type doped GaAs nanowire[J].半导体学报（英文版）,2018,39(5):26-29,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61376019,61504010,61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications),China(Nos.IPOC2017ZT02,IPOC2017ZZ01). （Nos.61376019,61504010,61774021）

半导体学报（英文版）

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ISSN：1674-4926

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