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Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

S.Poorvasha B.Lakshmi

半导体学报（英文版）2018，Vol.39Issue(5)：30-40,11.

半导体学报（英文版）2018，Vol.39Issue(5)：30-40,11.DOI:10.1088/1674-4926/39/5/054001

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

S.Poorvasha ¹B.Lakshmi¹

作者信息

1. School of Electronics Engineering, VIT University, Chennai, Tamilnadu, India
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摘要

关键词

double gate tunnel FETs/gate-drain overlap/unity gain cut-off frequency/maximum oscillation frequency/Y-parameters/modeling

Key words

double gate tunnel FETs/gate-drain overlap/unity gain cut-off frequency/maximum oscillation frequency/Y-parameters/modeling

引用本文复制引用

S.Poorvasha,B.Lakshmi..Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement[J].半导体学报（英文版）,2018,39(5):30-40,11.

基金项目

Project supported by the Department of Science and Technology,Government of India under SERB Scheme (No.SERB/F/2660). （No.SERB/F/2660）

半导体学报（英文版）

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ISSN：1674-4926

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