半导体学报（英文版）2018，Vol.39Issue(5)：41-47,7.DOI:10.1088/1674-4926/39/5/054002
Self-assembled patches in PtSi/n-Si (111) diodes
Self-assembled patches in PtSi/n-Si (111) diodes
I.M.Afandiyeva 1(S).Alt(i)ndal 2L.K.Abdullayeva 1A.(I).Bayramova3
作者信息
- 1. Baku State University, Institute for Physics Problem, Baku, Azerbaijan
- 2. Physics Department, Faculty of Sciences, Gazi University, Ankara, Turkey
- 3. Physics Department, Azerbaijan University of Architecture and Construction, Baku, Azerbaijan
- 折叠
摘要
关键词
Schottky barrier diode (SBD)/temperature dependence/self-assembled patches/temperature dependence/PtSi/n-Si (111)/C-V characteristics/quantum wellsKey words
Schottky barrier diode (SBD)/temperature dependence/self-assembled patches/temperature dependence/PtSi/n-Si (111)/C-V characteristics/quantum wells引用本文复制引用
I.M.Afandiyeva,(S).Alt(i)ndal,L.K.Abdullayeva,A.(I).Bayramova..Self-assembled patches in PtSi/n-Si (111) diodes[J].半导体学报（英文版）,2018,39(5):41-47,7.
