电工技术学报2018，Vol.33Issue(10)：2354-2364,11.DOI:10.19595/j.cnki.1000-6753.tces.161915
并联IGBT芯片的等离子体抽取渡越时间振荡机理及其特性分析
Mechanism and Characteristics of Plasma Extraction Transit Time Oscillationof Paralleled IGBT Chips
摘要
Abstract
High power IGBT usually contains several IGBT chips to obtain a high current handling capability. Plasma extraction transit time (PETT) oscillation exists in the tail phase during the turn-off process of paralleled IGBT chips, which causes serious electromagnetic interference to the environment and drive circuit. At first, the small signal characteristic of space charge region caused by injection of carriers is analyzed in this paper. Then, the relationship between package parasitic inductance and oscillating voltage range is investigated, the oscillation voltage range and frequency are deduced based on theoretical analysis. At last, an IGBT dynamic test platform is built, and the PETT oscillation characteristics of two paralleling IGBT chips are studied. Experimental results indicate that PETT oscillation is not randomly generated, which has certain relevance with collector current value.In addition, the experimental results are in agreement with the calculated results for oscillation voltage range and oscillation frequency. Therefore, the correctness of the analysis of PETT oscillation characteristics is verified.关键词
绝缘栅双极型晶体管/等离子体抽取渡越时间振荡/小信号模型/寄生电感Key words
Insulated gate bipolar transistor (IGBT)/plasma extraction transit time oscillation/small signal model/parasitic inductance分类
信息技术与安全科学引用本文复制引用
唐新灵,崔翔,赵志斌,张朋,李金元..并联IGBT芯片的等离子体抽取渡越时间振荡机理及其特性分析[J].电工技术学报,2018,33(10):2354-2364,11.基金项目
国家重大科技专项02专项(2015ZX02301),国家自然科学基金(51477048),国家能源应用技术研究及示范工程(NY20150705)和中央高校基本科研业务费专项资金(JB2016112)资助项目. （2015ZX02301）
