光学精密工程2018，Vol.26Issue(3)：517-522,6.DOI:10.3788/OPE.20182603.0517
基于等离激元热电子效应的光电晶体管制备及其特性
Fabrication and properties of plasmonic hot-electron phototransistor
摘要
Abstract
Windows of traditional wide band gap photodetectors are limited by the band gap of the semiconducting material used.In order to address this issue,the photoelectric properties of a plasmonic hot-electron phototransistor were fabricated and investigated.We have developed a plasmonic hot-electron phototransistor using a heavily doped silicon wafer as the back gate and insulating layer.Gold nanoparticles (AuNPs) were fabricated on the surface of the insulator via thermal annealing and the plasmonic hot-electron indium gallium zinc oxide (IGZO) phototransistor was developed.We investigated the optical and electrical properties of the phototransistor.The results revealed that the presence of AuNPs increased the photocurrent by a factor of 2.2 under a gate voltage of 90 V as compared to the IGZO phototransistor without AuNPs.The plasmonic hot-electron structure can effectively adjust the spectral response range of the phototransistor.Regulation of the back gate voltage was observed to amplify the photocurrent and improve the quantum efficiency of the device.关键词
光电探测/等离激元/热电子/禁带宽度/铟镓锌氧化物Key words
photoelectronic dectection/plasmonic/hot-electron/band gap/Indium Gallium Zinc Oxide(IGZO)分类
信息技术与安全科学引用本文复制引用
陈广甸,翟雨生,李裕培,王琦龙..基于等离激元热电子效应的光电晶体管制备及其特性[J].光学精密工程,2018,26(3):517-522,6.基金项目
国家自然科学基金资助项目(No.61372030,No.91333118,No.51120125001,No.61571124) （No.61372030,No.91333118,No.51120125001,No.61571124）
NSAF基金资助项目(No.U1730113) （No.U1730113）
江苏省自然科学基金资助项目(No.BK20171365) （No.BK20171365）
国家高新技术研究开发计划(No.2015AA016301) （No.2015AA016301）
111计划(No.B07027) （No.B07027）
