中北大学学报（自然科学版）2018，Vol.39Issue(3)：344-349,6.DOI:10.3969/j.issn.1673-3193.2018.03.016
一种氮化硼/石墨烯/氮化硼异质结制备工艺研究
Research on Fabricating Method of Boron Nitride/Graphene/Boron Nitride Heterostructure
吴承根 1李孟委 2王俊强 3赵世亮1
作者信息
- 1. 中北大学 仪器与电子学院,山西 太原030051
- 2. 中北大学 微系统集成研究中心,山西 太原030051
- 3. 中北大学 电子测试技术国家重点实验室,山西 太原030051
- 折叠
摘要
Abstract
The quality of the core sensitive part of graphene devices is bad.Based on the transfer methods of graphene and boron nitride(BN),a high quality BN/graphene/BN heterostructure fabrication method was designed.The fabrication method included the single step process such as vertical meteorological dr-ying method,thermal synthesis and nan-film graphics which improved the wet transfer technique of gra-phene and BN,and the fabrication method reduced the influence from the around environment.Finally, the purpose of improving transfer quality was achieved.SEM pictures show the successful preparation of heterostructure.The test results of the Raman spectrometer show that the G peak position of BN/gra-phene/BN heterostruture is 1 586 cm-1,the 2D peak position is 2 683 cm-1,the intensity ratio is 5.34, and the heterostructure has high quality.关键词
石墨烯/氮化硼/异质结/制备工艺Key words
graphene/boron nitrid/heterostructure/fabricating method分类
矿业与冶金引用本文复制引用
吴承根,李孟委,王俊强,赵世亮..一种氮化硼/石墨烯/氮化硼异质结制备工艺研究[J].中北大学学报（自然科学版）,2018,39(3):344-349,6.
