无机材料学报2018，Vol.33Issue(5)：528-534,7.DOI:10.15541/jim20170343
A位Sm掺杂对0.93Na0.5Bi0.5TiO3-0.07BaTiO3陶瓷微结构及电学性能的影响
Influence of A-site Sm Doping on Structural and Electrical Property of 0.93Na0.5Bi0.5TiO3-0.07BaTiO3Lead Free Ceramics
摘要
Abstract
Sm doped [(Na0.5Bi0.5)0.93Ba0.07]1-xSmxTiO3(BNBST) lead-free dielectric energy storage ceramics were prepared by solid-phase reaction sintering method. Effects of the Sm doping content on phase structure, microstructure, ferroelectric, dielectric, energy storage properties and d.c., and a.c. conductance of BNBST ceramics were systemati-cally investigated. Results indicate that the as-fabricated BNBST ceramics exhibit single-phase perovskite structure, and Sm dopants get into the A-site lattice of (Na0.5Bi0.5)0.93Ba0.07TiO3matrix. Dense and uniform grains are obtained by grain growth inhibition of Sm dopants with average grain size within 2 μm. The remanent polarization and coerciv-ity of BNBST ceramics sharply decrease after introducing Sm dopants, and the double hysteresis loops are observed with a little decrease of saturation polarization. The energy storage density and efficiency increase firstly and then de-crease with increasing Sm doping content, the energy storage density reaches a maximum value of 0.70 J/cm3at x=0.02 and 70 kV/cm electric field,with corresponding efficiency of 40%.The BNBST ceramics show an obvious re-laxation ferroelectric characteristic and its dielectric constant peaks of Tmdecrease and planarize with increasing Sm doping content. The electric insulativity of BNBST ceramics has strong temperature dependence, and the excellent electric insulativity can be kept when ambient temperature is below 300℃.关键词
BNT-BT/Sm掺杂/储能/铁电Key words
BNT-BT/Sm doping/energy storage/ferroelectric分类
化学化工引用本文复制引用
窦闰镨,卢晓鹏,杨玲,王华,周昌荣,许积文..A位Sm掺杂对0.93Na0.5Bi0.5TiO3-0.07BaTiO3陶瓷微结构及电学性能的影响[J].无机材料学报,2018,33(5):528-534,7.基金项目
国基自然科学基金(11664006) （11664006）
广西自然科学基金(2016GXNSFAA380069)National Natural Science Foundation of China(11664006) （2016GXNSFAA380069）
Guangxi Natural Science Foundation(2016GXNS-FAA380069) （2016GXNS-FAA380069）
