无机材料学报2018，Vol.33Issue(5)：535-539,5.DOI:10.15541/jim20170256
锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究
Characterization and Electrical Property of Impurity Concentration in Ge-N Codoped SiC Crystals
摘要
Abstract
2-inch Ge-N codoped and Ge doped SiC single crystals were grown by physical vapor transport (PVT) method. And the SiC ingots were fabricated into 10 mm×10 mm SiC wafers for characterization. Semiconductor tech-nology was used to fabricate Ti/Pt/Au metal contact on the carbide-terminated face of SiC wafers. Subsequently, all samples were characterized by secondary ion mass spectrometry (SIMS) and Hall measurements. The SIMS results showed that Ge-N codoping method could enhance the Ge doping concentration in SiC crystals effectively, which could achieve 1.19×1019/cm3. According to Hall measurement, ohmic contact could be obtained when samples were annealed at temperature higher than 700℃ and the optimal annealing temperature was 700℃. In addition, the contact resistance of the heavy Ge doped sample was lower than that of the light doped one, indicating that the ohmic contact property could be enhanced by improving the Ge doping concentrations in SiC crystals. Furthermore, as the increase of Ge doping concentration, the mobility gradually decreased. It was ascribed to that the Ge-N atoms matched well with SiC lattice in codoping method leading to higher Ge doping concentration. Under that condition, the impurity scatter-ing effect became evident, which resulted in a lower mobility for Ge-N codoped sample.关键词
物理气相传输法/Ge掺杂/晶格匹配/欧姆接触/迁移率Key words
Ge doping/lattice/Ohmic contact/mobility分类
通用工业技术引用本文复制引用
李天,王瑞琪,于芃,陈秀芳,杨祥龙,谢雪健,张福生,肖龙飞,王荣堃,徐现刚,胡小波..锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究[J].无机材料学报,2018,33(5):535-539,5.基金项目
国家重点研发计划(2016YFB0400401) （2016YFB0400401）
装备预研教育部联合基金(青年人才)(6141A0232) （青年人才）
国家自然科学基金(51502156,61327808,61504075) （51502156,61327808,61504075）
国家电网公司科技项目(SGSDDK00KJJS1600071) （SGSDDK00KJJS1600071）
国家重点基础研究发展计划(973计划)(2013CB632801)National Key R&D Program of China(2016YFB0400401) （973计划）
The joint Foundation of Equipment Development and State Education Ministry for Outstanding Researcher(6141A0232) （6141A0232）
National Natural Science Foundation of China(51502156,61327808,61504075) （51502156,61327808,61504075）
The Science and Technology Project of State Grid Corporation of China(SGSDDK00KJJS1600071) （SGSDDK00KJJS1600071）
National Program on Key Basic Research Project(973 Program)(2013CB632801) （973 Program）
