电源学报2018，Vol.16Issue(3)：36-43,8.DOI:10.13234/j.issn.2095-2805.2018.3.36
基于SiC MOSFET的移相全桥ZVS变换器
Phase-shift Full-bridge ZVS Converter Based on SiC MOSFET
苏敏 1邹旭东2
作者信息
- 1. 华中科技大学中欧清洁与可再生能源学院,武汉430074
- 2. 华中科技大学强电磁工程与新技术国家重点实验室，武汉430074
- 折叠
摘要
Abstract
With the soft-switching technology, phase-shift full-bridge ZVS converter significantly reduces the switching loss, and further improves the efficiency of the device. Therefore, it has been widely applied. However, the rectifier diode conduction loss is relatively larger when a traditional phase-shift full-bridge ZVS converter is operating under the condition of low voltage and large current. In this paper, synchronous rectifier technology was adopted to re-duce the secondary rectifier conduction loss at first. Then, clamp diode was added in the primary side to suppress the rectifier voltage spike in the secondary side, and the DC component was suppressed by connecting a blocking capacitor in series to the primary side. At last, a simulation model of SiC MOSFET half-bridge module was established using Saber.The high-frequency operation characteristics of SiC MOSFET were verified through the collaborative simulation of MATLAB and Saber.关键词
移相全桥/同步整流/箝位二极管/SiCMOSFETKey words
phase-shift full-bridge/synchronous rectifier/clamp diode/SiC MOSFET分类
信息技术与安全科学引用本文复制引用
苏敏,邹旭东..基于SiC MOSFET的移相全桥ZVS变换器[J].电源学报,2018,16(3):36-43,8.
