四川大学学报（自然科学版）2018，Vol.55Issue(3)：571-578,8.DOI:10.3969/j.issn.0490-6756.2018.03.026
W掺杂和电化学表面处理制备高光电化学性能的BiVO4光阳极
Synthesis of BiVO4 photoanode with improved photoelectrochemical performance by W-doping and surface electrochemical pretreatment
摘要
Abstract
W-doped BiVO4 photoanode was obtained through drop-casting method .The physical and pho-tophysical properties of the BiVO4 photoanode were investigated by X-ray diffraction (XRD) ,UV-vis ab-sorption spectroscopy and scanning electron microscopy (SEM ) .Photo-electrochemical performance was evaluated for the W-doped BiVO4 photoanode .In terms of maximizing the photoelectrochemical perform-ances of the W-doped BiVO4 photoanodes ,the synthesis conditions were optimized .The W-doped Bi-VO4 photoanode exhibits improved photoelectrochemical performance after the electrochemical surface pretreatment .The photoelctrochemical response of BiVO4 photoanode can be improved by both tungsten doping and the electrochemical surface pretreatment .A possible mechanism was also proposed to explain the reason for the photocurrent enhancement .关键词
BiVO4/W掺杂/光阳极Key words
BiVO4/W-doped/Photoanode分类
化学化工引用本文复制引用
万丽娟,杨明..W掺杂和电化学表面处理制备高光电化学性能的BiVO4光阳极[J].四川大学学报（自然科学版）,2018,55(3):571-578,8.基金项目
南京交通联业技术学院科研基金(JZ1704) （JZ1704）
江苏省高校自然科学研究面上项目基金(16KJD610004) （16KJD610004）
国家自然科学基金(51208102) （51208102）
南京交通职业技术学院高层次人才科研启动基金 （）
