电池2018，Vol.48Issue(1)：17-20,4.DOI:10.19535/j.1001-1579.2018.01.005
CuOx空穴传输层用于钙钛矿太阳能电池
Application of CUOx hole-transporting layer in perovskite solar cells
摘要
Abstract
The CuOx film on indium tin oxide(ITO) conductive glass substrate was synthesized via electrochemical deposition.The highest occupied molecular(HOMO) and lowest unoccupied molecular(LUMO) energy levels were-5.31 eV and-3.30 eV,respectively,which matched well with those of CH3NH3PbI3 perovskite.It was utilized as hole-transporting layer in perovskite solar cells with device configuration of ITO/CuOx/CH3NH3PbI3/C60/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/Ag.The champion photoelectric conversion efficiency of 13.0％ was obtained with open circuit voltage of 0.99 V,short-circuit current density of 20.2 mA/cm2 and fill factor of 65％.关键词
太阳能电池/氧化亚铜/无机p-型半导体/空穴传输层/电化学沉积Key words
solar cell/cuprous oxide/inorganic p-type semiconductor/hole-transporting layer/electrochemical deposition分类
化学化工引用本文复制引用
闫伟博,李云龙..CuOx空穴传输层用于钙钛矿太阳能电池[J].电池,2018,48(1):17-20,4.基金项目
国家自然科学基金青年项目(61704087),江苏省自然科学基金青年项目(BK20160887) （61704087）
