发光学报2018，Vol.39Issue(6)：823-829,7.DOI:10.3788/fgxb20183906.0823
非晶铟镓锌氧薄膜晶体管钼/铜源漏电极的研究
Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors
摘要
Abstract
Mo/Cu source/drain ( S/D ) electrodes for amorphous InGaZnO thin film transistors ( a-IGZO TFTs) were investigated. The experimental data indicate that the single-layer Mo electrodes have good adhesion to gate insulators, smaller surface roughness, and higher resistivity, whereas the single-layer Cu electrodes possess bad adhesion to gate insulators as well as the serious Cu atom dif-fusion problems, larger surface roughness, and lower resistivity. To complement each other's advan-tages, the double-layer Mo/Cu electrodes as well as the corresponding a-IGZO TFTs are designed and fabricated, which exhibits good performance parameters(field effect mobility of 8. 33 cm2 ·V-1 · s-1, threshold voltage of 6. 0 V, subthreshold swing of 2. 0 V/dec, and on-off current ratio of 1. 3 × 107 ) . This proved the feasibility and practicability of the double-layer Mo/Cu source/drain elec-trodes for the mass productions of a-IGZO TFTs.关键词
平板显示/非晶铟镓锌氧/薄膜晶体管/钼/铜电极/磁控溅射Key words
flat panel displays/amorphous InGaZnO/thin film transistors/Mo/Cu electrodes/magnetron sputtering分类
信息技术与安全科学引用本文复制引用
张磊,刘国超,董承远..非晶铟镓锌氧薄膜晶体管钼/铜源漏电极的研究[J].发光学报,2018,39(6):823-829,7.基金项目
国家自然科学基金(61474075)资助项目Supported by National Natural Science Foundation of China(61474075) （61474075）
