西安电子科技大学学报（自然科学版）2018，Vol.45Issue(3)：24-29,6.DOI:10.3969/j.issn.1001-2400.2018.03.005
单轴应变锗带隙特性和电子有效质量计算
Calculation of bandgap characteristic and electron effective mass in uniaxial strained Germanium
摘要
Abstract
Strain engineering plays an important role in improving Ge devices performance,while energy band structure is the theoretical basis for studying the electrical and optical properties of strained Ge.In this paper,the energy band structure of uniaxial strained Ge,over the entire Brillouin zone,is obtained by diagonalizing a 30-band k·p Hamiltonian matrix which includes the spin-orbit coupling interaction and strain effect.According to the band dispersion relation,the conduction band valleys shift and split,as well as electron effective masses,including longitudinal,transverse and density-of-states effective masses are quantitatively evaluated.Calculation results indicate that Ge is converted from an indirect to direct bandgap semiconductor under the[001]and[111]uniaxial tensile stress.The longitudinal and transverse effective masses of L andΔvalleys are not obviously dependent on the uniaxial stress.However,the density-of-states effective masses of L andΔvalleys can be minimized by the [111]and[001]uniaxial compressive stress respectively,which is of benefit to increase the mobility by reducing the probability of electron scattering.These results can provide a theoretical reference for the design of high-performance uniaxial strained Ge devices.关键词
30k·p方法/单轴应变锗/能带结构/电子有效质量Key words
30 k·p method/uniaxial strained Ge/energy band structure/electron effective mass分类
信息技术与安全科学引用本文复制引用
底琳佳,戴显英,苗东铭,吴淑静,郝跃..单轴应变锗带隙特性和电子有效质量计算[J].西安电子科技大学学报（自然科学版）,2018,45(3):24-29,6.基金项目
国家部委重点基金资助项目(9140A08020115DZ01024) （9140A08020115DZ01024）
中央高校基本科研业务费专项资金资助项目(XJS17061,JBX171102) （XJS17061,JBX171102）
中国博士后科学基金资助项目(2017M613061) （2017M613061）
高等学校学科创新引智计划资助项目(B12026) （B12026）
