西安电子科技大学学报（自然科学版）2018，Vol.45Issue(3)：30-34,5.DOI:10.3969/j.issn.1001-2400.2018.03.006
一种低噪声GaAs HBT VCO的设计与实现
Design and implementation of a low-phase-noise GaAs HBT VCO
摘要
Abstract
In order to reduce the effect of diodes in the bipolar process on the phase noise,a fully integrated K-band differential voltage controlled oscillator (VCO) is proposed.The VCO is realized based on gallium arsenide(GaAs)hetero-junction bipolar transistor(HBT)technology with a cutoff frequency fT of 75 GHz and a maximum oscillating frequency fMAX of 80 GHz.To reduce the phase noise of the VCO, the modified π-feedback networks are employed and applied to compensate the 180°phase shift.The oscillation frequency of this chip is from 23.123 GHz to 23.851 GHz.At the dc power consumption of 72 mW from a -6 V power supply,the measured maximum output power is -1.68 dBm.The phase noise is about -103.12 dBc/Hz at 1 MHz offset and the chip area is 0.49 mm2 .It is shown that the circuit structure can reduce the effect of diodes in the bipolar process on the phase noise and achieve low phase noise without sacrificing the tuning range of the VCO.关键词
K波段/相位噪声/改进的π形反馈网络/砷化镓异质结双极晶体管/压控振荡器Key words
K-band/phase noise/modifiedπ-feedback network/gallium arsenide (GaAs) hetero-j unction bipolar transistor(HBT)/voltage controlled oscillator(VCO)分类
信息技术与安全科学引用本文复制引用
武岳,吕红亮,张玉明,张义门..一种低噪声GaAs HBT VCO的设计与实现[J].西安电子科技大学学报（自然科学版）,2018,45(3):30-34,5.基金项目
共性基础基金资助项目(9140A***501) （9140A***501）
国家部委基金资助项目(3151***301) （3151***301）
国家部委科技创新基金资助项目(48**4) （48**4）
