西安电子科技大学学报（自然科学版）2018，Vol.45Issue(3)：97-101,129,6.DOI:10.3969/j.issn.1001-2400.2018.03.018
碳化硅MOSFET电路模型及其应用
Circuit model of SiC MOSFET and application
摘要
Abstract
A new equivalent-circuit model of the SiC MOSFET is suggested.Based on the conventional equivalent-circuit model of the SiC MOSFET,the leakage current of the gate oxide and PN junction is included,and the invariable mobility in the conventional model is replaced by an advanced mobility model which can reflect the interface characterization of SiC/SiO2 .The accuracy of the proposed model is verified by experimental results from references.Compared to the conventional model,the proposed model can simulate the gate leakage current and the failure of SiC MOSFET.In addition,the suggested model can be utilized to study the effect of interface traps on the characteristics of the SiC MOSFET operated under the short-circuit condition.关键词
碳化硅金属氧化物半导体场效应晶体管/界面陷阱/迁移率/泄漏电流/短路Key words
SiC metal-oxide-semiconductor field effect transistor/interface trap/mobility/leakage current/short-circuit分类
信息技术与安全科学引用本文复制引用
周郁明,刘航志,杨婷婷,王兵..碳化硅MOSFET电路模型及其应用[J].西安电子科技大学学报（自然科学版）,2018,45(3):97-101,129,6.基金项目
国家自然科学基金资助项目(51177003,61472228) （51177003,61472228）
安徽高校自然科学研究重点资助项目(KJ2016A805) （KJ2016A805）
安徽省自然科学基金资助项目(1508085 MF129) （1508085 MF129）
