厦门大学学报（自然科学版）2018，Vol.57Issue(3)：383-389,7.DOI:10.6043/j.issn.0438-0479.201707003
GaN基材料中V型缺陷对LED光电性能的影响
Effects of V-defects in GaN-based Materals on LED Photoelectic Property
汪洋1
作者信息
- 1. 厦门大学半导体光电材料及其高效转换器件协同创新中心,福建 厦门 361005;厦门乾照光电股份有限公司,福建 厦门 361101
- 折叠
摘要
Abstract
Luminescence efficiency is one of the key indicators of LEDs.For improving the luminescence efficiency of GaN-LEDs, photoluminescence and electroluminescencecharacteristics of materials and devices with various V-defect densities are studied.One competitive mechanism is revealed.In one hand,the injection efficiency promotion of carriers (hole mainly)due to the increased V-de-fectdensity results in the increase of luminescence efficiency.On the other hand,the area decrease of the active region due to the in-creased V-defectdensity leads to the decrease of luminescence efficiency.LED chips are fabricated with identical size of 0.25 mm× 0.75 mm,and are drived at the current of 150 mA.With the increase of the V-defect density,the light output and the external quan-tum efficiency are improved first and then decreased.The best light output and external quantum efficiency of chips with the V-defect density of 4.2×108 cm-2 are shown as 183.5 mW and 45.0％ respectively,which are 6.6％ better than those of 172.2 mW and 42.2％ of chips with un-optimized V-defect density of 1.7×108 cm-2 .关键词
GaN/发光二极管/V型缺陷Key words
GaN/LED/V-defect分类
数理科学引用本文复制引用
汪洋..GaN基材料中V型缺陷对LED光电性能的影响[J].厦门大学学报（自然科学版）,2018,57(3):383-389,7.
