硅酸盐通报2018，Vol.37Issue(5)：1795-1798,4.
工艺参数对SiC刻蚀性能及微结构型貌的影响
Effect of Process on SiC Micro-mode and Etching
摘要
Abstract
Using a high density plasma ICP etching machine , Under different process conditions,The etching properties of SiC were investigated .The result shows that: With the increase of O2 flow ratio, the etching rate increases, when the flow ratio of O2 reaches 0.5, the maximum etching rate is 400 A°/min, then, the etching rate decreases.With the increase of atmospheric pressure , the etching rate increases. When the pressure reaches 15 Pa, the maximum etching rate is 580 A°/min, and then the etching rate decreases.The directionality of the ion becomes worse and the pitting becomes serious .Etching morphology will changesfrom the "凵"to "U", then to "V"type.SiC mold grooves have high machining accuracy, high processing efficiency, low roughness, Partial mold groove industry is satisfied .关键词
SiC/等离子体/刻蚀/模具Key words
SiC/plasma/etching/mode分类
化学化工引用本文复制引用
台畅,高志廷..工艺参数对SiC刻蚀性能及微结构型貌的影响[J].硅酸盐通报,2018,37(5):1795-1798,4.基金项目
河南省科技计划资助项目(162102210320) （162102210320）
河南省高等学校重点科研项目(18A510008) （18A510008）
