红外与毫米波学报2018，Vol.37Issue(3)：325-331,350,8.DOI:10.11972/j.issn.1001-9014.2018.03.012
InSb面阵探测器铟柱缺陷成因与特征研究
Causes and characteristics of indium bump defects in InSb focal plane array
摘要
Abstract
In order to study the causes and characteristics of indium bump defects in infrared focal plane arrays ( IRFPA) , during the fabrication of InSb IRFPAs, indium bumps of different pixel sizes were studied using positive photoresist.Then, the surface morphology of the chip, the connectivity of the detector, and the performance of the detector were characterized using an optical microscope and an FPA test stand, respectively.The results show that the chip surface and detector connectivity of the 50μm ×50 μm pixel size sample is better than other chips.Due to the small pixel size, the surface topog-raphy of the chip is connected or missing to the defective indium bump.The connectivity test results are consistent with the test results of the indium raised surface topography.The connected defects are due to the surface of the indium bumps caused by indium remnants during lithography and stripping. The missing defects are due to the lack of elemental indium bumps caused by positive photoresist resid-ual during photolithography.The response voltage of the connected faulty component is basically the same as the response voltage of the normal component.The response voltage of the defect defective el-ement is zero, and the response voltage of the nearest neighbor element is increased by about 25％compared with the normal element.The result has important reference significance for improving the performance of the FPA detectors by optimizing the production process.关键词
面阵探测器/铟柱缺陷/铟柱阵列/缺陷Key words
focal plane array/indium bump defects/indium bump arrays/defective分类
信息技术与安全科学引用本文复制引用
侯治锦,傅莉,鲁正雄,司俊杰,王巍,吕衍秋..InSb面阵探测器铟柱缺陷成因与特征研究[J].红外与毫米波学报,2018,37(3):325-331,350,8.基金项目
航空创新基金(2011D01406)Supported by the Aviation Innovation Foundation of China (2011D01406) （2011D01406）
