苏州科技大学学报（自然科学版）2018，Vol.35Issue(2)：32-36,54,6.DOI:10.12084/j.issn.2096-3289.2018.02.007
多层金属预制膜硫化法制备CuAlS2薄膜
Preparation of CuAlS 2 thin films by sulfurization of multilayer metallic precursors
摘要
Abstract
Polycrystalline CuAlS2 thin films with the chalcopyrite structure were prepared by sulfurization of multilayer Cu/Al precursors deposited with magnetron sputtering. Phase composition,crystal structure,surface morphology,chemical composition and optical properties of the films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive X-ray spectroscopy (EDS) and UV-Vis spectrophotometer respectively. The crystallization temperature of CuAlS2 films was reduced by the multilayer precursors,from 750 ℃ of the monolayer [Cu/Al]1 precursor to 650 ℃ of [Cu/Al]8. The multilayer precursors inhibited the formation of CuS phase. The lattice parameters of CuAlS2 films were a=0.53710~0.53327 nm,c=1.0331~1.0339 nm,and the anion x-coordinate xS=1/4 by Rietveld refinements. The EDS results suggest the homogenous distribution of Cu,Al and S. Optical band gap of CuAlS2 thin films is slightly increased to 3.8 eV,which is due to the anion displacement through the band calculations.关键词
CuAlS2薄膜/宽带隙/金属预制膜/硫化法/黄铜矿Key words
CuAlS2 film/wide bandgap/metallic precursor/sulfurization/chalcopyrite分类
数理科学引用本文复制引用
颜长,赵蒙,张强,姚金雷..多层金属预制膜硫化法制备CuAlS2薄膜[J].苏州科技大学学报（自然科学版）,2018,35(2):32-36,54,6.基金项目
国家自然科学基金资助项目(51301116 （）
21771136) （）
江苏省高等学校自然科学研究重大项目(17KJA140001) （17KJA140001）
苏州科技大学研究生创新工程项目(SKYCX16-013 （）
SKYCX16-014) （）
