东南大学学报（英文版）2018，Vol.34Issue(2)：182-186,5.DOI:10.3969/j.issn.1003-7985.2018.02.006
一种新颖的双节点翻转自恢复的抗辐射加固锁存器
A novel double-node-upset-resilient radiation-hardened latch
摘要
Abstract
To effectively tolerate a double-node upset, a novel double-node-upset-resilient radiation-hardened latch is proposed in 22 nm complementary-metal-oxide-semiconductor technology. Using three interlocked single-node-upset-resilient cells, which are identically mainly constructed from three mutually feeding back 2-input C-elements, the latch achieves double-node-upset-resilience. Using smaller transistor sizes, clock-gating technology, and high-speed transmission-path, the cost of the latch is effectively reduced. Simulation results demonstrate the double-node-upset-resilience of the latch and also show that compared with the up-to-date double-node-upset-resilient latches, the proposed latch reduces the transmission delay by 72. 54%, the power dissipation by 33. 97%, and the delay-power-area product by 78. 57%, while the average cost of the silicon area is only increased by 16. 45%.关键词
抗辐射加固/电路可靠性/软错误/双节点翻转/单节点翻转Key words
radiation hardening/circuit reliability/soft error/double-node upset/single-node upset分类
信息技术与安全科学引用本文复制引用
王啟军,闫爱斌..一种新颖的双节点翻转自恢复的抗辐射加固锁存器[J].东南大学学报（英文版）,2018,34(2):182-186,5.基金项目
The National Natural Science Foundation of China ( No. 61604001) , the Doctor Startup Fund of Anhui University ( No. J01003217) . （ No. 61604001）
