人工晶体学报2018，Vol.47Issue(6)：1123-1127,5.
磁控溅射法制备InN薄膜的可控生长及表征
Controlled Growth and Characterization of InN Thin Films Perpared by Magnetron Sputtering
摘要
Abstract
In order to licationsdevelop InN semiconductor materials' optoelectronics in the optoelectronics field.Si films ( 111 ) were prepared by magnetron sputtering, and InN thin film samples were characterized by X-Ray Diffraction ( XRD) and scanning electron microscopy ( SEM).The influences of pressure, Ar and N2 flow rate and substrate temperature on morphology, structure of InN film are investigated systematically.The results show that the intensity of (101 ) peak get increased and turn decreased with the increasing of pressure, and the crystal surface distance becomes smaller and then gets larger, eventually, InN film of triangular cone are obtained.The growth orientation of InN film grows from (101) surface to (002) surface with the increase of the flow ratio of Ar to N2, finally, which gets InN grains of trigonal cone.The growth orientation of InN films changed, and the morphology of the films changed from trigonal taper to six-dimensional grain structure with the increase of substrate temperature,关键词
InN薄膜/磁控溅射/压强/流量比/衬底温度Key words
InN thin film/magnetron sputtering/pressure/flow ratio/substrate temperature分类
信息技术与安全科学引用本文复制引用
王箫扬,张雄,杨延宁,贺琳,张富春,张水利,李小敏..磁控溅射法制备InN薄膜的可控生长及表征[J].人工晶体学报,2018,47(6):1123-1127,5.基金项目
延安大学2017年科研计划项目(YDQ2017-11) （YDQ2017-11）
国家自然科学基金(61664008) （61664008）
延安大学引导项目(YD2016-02) （YD2016-02）
为建设高水平大学学科建设的专项研究基金(2015SXTS02) （2015SXTS02）
