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Controllable growth of GeSi nanostructures by molecular beam epitaxy

Yingjie Ma Tong Zhou Zhenyang Zhong Zuimin Jiang

半导体学报（英文版）2018，Vol.39Issue(6)：51-65,15.

半导体学报（英文版）2018，Vol.39Issue(6)：51-65,15.DOI:10.1088/1674-4926/39/6/061004

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Yingjie Ma ¹Tong Zhou ²Zhenyang Zhong ²Zuimin Jiang³

作者信息

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2. State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, China
3. School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
折叠

摘要

关键词

Ge/Si/molecular beam epitaxy/nanostructures/controllable/patterned substrates/inclined surfaces/preferential growth

Key words

Ge/Si/molecular beam epitaxy/nanostructures/controllable/patterned substrates/inclined surfaces/preferential growth

引用本文复制引用

Yingjie Ma,Tong Zhou,Zhenyang Zhong,Zuimin Jiang..Controllable growth of GeSi nanostructures by molecular beam epitaxy[J].半导体学报（英文版）,2018,39(6):51-65,15.

基金项目

Project supports by the Natural Science Foundation of China (Nos. 61605232, 61674039) and the Open Research Project of State Key Laboratory of Surface Physics from Fudan University (Nos. KF2016_15s, KF2017_05). （Nos. 61605232, 61674039）

半导体学报（英文版）

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ISSN：1674-4926

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