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焊料层空洞对IGBT器件热稳定性的影响

肖飞 罗毅飞 刘宾礼 夏燕飞

高电压技术2018,Vol.44Issue(5):1499-1506,8.
高电压技术2018,Vol.44Issue(5):1499-1506,8.DOI:10.13336/j.1003-6520.hve.20180430014

焊料层空洞对IGBT器件热稳定性的影响

Influence of Voids in Solder Layer on the Temperature Stability of IGBTs

肖飞 1罗毅飞 1刘宾礼 1夏燕飞1

作者信息

  • 1. 海军工程大学舰船综合电力技术国防科技重点实验室,武汉 430033
  • 折叠

摘要

Abstract

In order to find out the influence of package fatigue on the thermal characteristics of insulated gate bipolar transistors (IGBTs), we analyzed the influence of solder voids on the thermal stability of IGBTs from the aspect of solder layer. First, we established a finite element model of IGBT. Then, we used the heat transfer theory to analyze the influences of void size, location and distribution on the IGBT junction temperature, and simulated the variation law. Finally, we used IGBT samples with different voids through lifetime acceleration experiments to verify the analysis. The results show that voids in diagonal have the most remarkable influence on junction temperature under the same void ratio; voids in the corners have the most remarkable influence on junction temperature under the same location; the influence of single void on chip junction temperature is greater than multiple voids under the same void ratio and the center distribution has greater influence than other distributions. In addition, both the junction temperature and the thermal resistance of junction to case show an approximately linear relation with the void ratio. The experimental results show good consistency with the simulation data. The conclusion can supply important guidance from the perspective of package fatigue to the IGBT applications under extreme conditions.

关键词

焊料层空洞/器件热稳定性/空洞率/3维有限元模型/结温/结壳热阻

Key words

solder layer void/thermal stability of the device/void ratio/three-dimensional finite element model/junction temperature/thermal resistance of junction to case

引用本文复制引用

肖飞,罗毅飞,刘宾礼,夏燕飞..焊料层空洞对IGBT器件热稳定性的影响[J].高电压技术,2018,44(5):1499-1506,8.

基金项目

国家重点基础研究发展计划(973 计划)(2015CB251004) (973 计划)

国家自然科学基金(51507185).Project supported by National Basic Research Program of China (973 Program) (2015CB251004), National Natural Science Foundation of China (51507185). (51507185)

高电压技术

OA北大核心CSCDCSTPCD

1003-6520

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