高压电器2018，Vol.54Issue(5)：119-126,8.DOI:10.13296/j.1001-1609.hva.2018.05.019
直流GIL盆式绝缘子的表面电荷分布
Surface Charge Distribution of DC GIL Basin-type Insulator
摘要
Abstract
The stationnary electric field of the DC gas-insulated metal-enclosed transmission line (GIL) basin-type insulator is distributed according to the electric conductivity of the dielectrics. Under long-term DC voltage, charge will accumulate on the surface of insulator, leading to local electric field distortion and threatening the safe operation of the equipment. Therefore, it is of great necessity to study the phenomenon of surface charge accumulation in DC basin-type insulator, by mastering accurate charge measurement techniques and charge inversed calculation algorithm, and surface charge accumulation characteristics, in order to provide reference for improving the insulation level of insulator. In this paper, a new type of surface charge measurement device for a basin-type insulator is developed. The probe can be controlled to scan the surface of the insulator perpendicularly at an equidistant attitude. A set of concentric ring electrodes is used for the calibration of the electrostatic probe to obtain its spatial response function. Based on the Cholesky decomposition method for matrix, the surface charge distribution of the insulator is inversely calculated. The surface charge accumulation and decay characteristics of a ±200 kV DC pot insulators under different DC voltages are experimentally studied. Based on the experimental and simulation results, the surface charge distribution models suitable for different conditions are proposed. This paper is of significance for further comprehension of the surface charge accumulation phenomenon in DC basin-type insulators and for the amelioration of charge accumulation mechanism.关键词
直流盆式绝缘子/表面电荷/反演计算/分布/积聚模型Key words
DC basin-type insulator/surface charge/inversed calculation/distribution/accumulation model引用本文复制引用
杜乾栋,赵军平,吴治诚,崔博源,陈允,李志兵,张乔根..直流GIL盆式绝缘子的表面电荷分布[J].高压电器,2018,54(5):119-126,8.基金项目
国家电网公司科技项目资助(PGKJ2018-151).Project Supported by Science and Technology Project of SGCC(PGKJ2018-151). （PGKJ2018-151）
